Renesas Electronics Corporation announced the availability of three silicon carbide (SiC) compound power devices, the RJQ6020DPM, the RJQ6021DPM and the RJQ6022DPM, that incorporate multiple SiC ...
Rohm Semiconductor and Shenzhen BASiC Semiconductor have entered into a strategic partnership agreement to develop SiC power devices for automotive applications. The partnership will leverage each of ...
A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst ...
MarketWatch: NoMIS Power Expands Medium-Voltage SiC MOSFET Portfolio with New 3.3 kV and 1.7 kV Devices
NoMIS Power Expands Medium-Voltage SiC MOSFET Portfolio with New 3.3 kV and 1.7 kV Devices
EDN: What Are the Prospects for SiC and GaN Power Devices in the Future?
In recent years, some important, high-growth applications have experienced an increase in the use of silicon carbide (SiC) and gallium nitride (GaN) power devices. GaN is being utilized in charging ...
What Are the Prospects for SiC and GaN Power Devices in the Future?
Power devices continue to evolve rapidly as SiC and GaN technologies become more highly integrated, easy to use, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes ...
Nasdaq: Microchip Unveils Industry-Leading 3.3 kV Silicon Carbide (SiC) Power Devices Enabling New Levels of Efficiency and Reliability
Microchip Unveils Industry-Leading 3.3 kV Silicon Carbide (SiC) Power Devices Enabling New Levels of Efficiency and Reliability